ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,680, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of fabricati... और पढ़ें
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,681, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor structure and fabricating met... और पढ़ें
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,682, issued on June 23, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Vertical transport transistor devices with b... और पढ़ें
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,683, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device with reduc... और पढ़ें
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,684, issued on June 23, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor device and method ... और पढ़ें
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,685, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Triple layer high-k gate dielectric... और पढ़ें
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,686, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor structure with flush shallow ... और पढ़ें
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,687, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Field effect transistor with gate e... और पढ़ें
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,688, issued on June 23, was assigned to Intel Corp. (Santa Clara, Calif.). "Low resistance metal to semiconductor contacts for integrated N... और पढ़ें
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,689, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Large dimension metal gate field-ef... और पढ़ें